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Circuits > RF circuit > Electronic Eavesdropping Devices Detector
Electronic Eavesdropping Devices Detector
The placement of electronic eavesdropping
devices in homes and companies offices is becoming - unfortunately - a usual
phenomenon through the passing of the years. Espionage movies admirers, is
possible to remember scenes of the placement of very small components (which
had the format of a button or a lentil) in rooms or offices which are not
far away from the reality. However, the detection of electronic
eavesdropping devices is not so easy, even though it is known their
placement. The reason is the very small format and their similarity to other
things which we use every day. Using the detector that is described in this
article, you can ensure the privacy of your personal life because it allows
you to sweep
for electronic eavesdropping devices. |
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| Technical
Specifications - Characteristics |
| Supply voltage : |
9V(DC) |
| Dissipation current: |
30mA (max) |
| Detection range: |
1 - 1000 MHz |
| Acoustic indication using a
loudspeaker |
| Sensitivity adjustment using a
potentiometer. |
|
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Electronic bugs are very small radio frequency transmitters, that are
secretly placed in a room that is to be monitored. Since most bugs are RF
sources, almost any wideband receiver can be used as a detector. Our detector
detects an RF signal ranging from 1 to 1000 MHz. Figure 1 shows the schematic
diagram of the detector. When the electronic bug operates, it emits an RF signal.
This signal is received by the antenna (point 1 of figure 1) and is applied to
the base of the transistor TR1 through a high-pass filter ( a filter that
permits the passing of high frequencies). The high-pass filter consists of the
capacitors C4, C5 and the resistor R7.
When low frequency signals are applied to the input of the filter, the
capacitors C4 and C5 operate as open switches and the filter rejects the low
frequency signals. The cut-off frequency of the high-pass filter is defined to
be 60 Hz rejecting any interferences which come from the mains. The transistor
TR1 is in common collector conjunction and it is used to amplify the signal. The
gain that is provided is 10dB for a signal that varies in the frequency range 1
- 1000 MHz. The resistors R1, R2, R8 form the biasing network for the transistor
TR1. The amplified signal is then applied, via the capacitor C6, to the anode of
the diode D1. The diode is particularly manufactured to operate in high
frequencies, since a common diode can not go from the conduction condition to
the cut-off condition very fast preventing the appearance of reverse currents.
However the operation of the diode in the high frequencies range results in
the appearance of a conduction at the beginning of the negative half period. The
potentiometer P1 adjusts the proportion of the signal at the terminals of the
diode D1 and applies it to the inverting input (pin 2) of the operational
amplifier A1. The operational amplifier A1 is configured as a very high gain
amplifier. The value of the gain is defined by the capacitor C8 and the
resistors R6 and R12. With no signal input from the antenna, the output of A1 at
pin 1 is near ground potential. When the antenna detects a signal in the range 1
- 1000 MHz, it applies it to the base of the transistor TR1 producing a
negative-going voltage at the cathode of diode D1.
That voltage is applied to the inverting input of A1 which amplifies and inverts
the signal, producing a positive-going output at pin 1. The next stage after the
op. amp. A1 is a voltage controlled oscillator (VCO). The oscillation frequency
of VCO is controlled by the output voltage of the operational amplifier A1. The
operational amplifiers A2, A4, along with the resistors R11, R13, R14, R16, R17,
R18, R19, R20, R21, R23, the capacitor C9 and the transistor TR2 are arranged to
form a voltage-controlled oscillator (VCO) that operates out of the audio-frequency
range. As the output of A1 increases, the frequency of the VCO increases. The
VCO output, at pin 8 of the operational amplifier A4, is fed to the input of A3,
which is configured as a non-inverting unity gain (buffer) amplifier. The output
of A3 is used to drive the transistor TR3, which, in turn, drives the output
speaker

Before you start the construction of the circuit you must follow the basic
instructions. Place and solder the socket of the IC1. Then install the passive
components (resistors, capacitors) on the board checking for the right placement
and orientation. After this, install the semiconductors (diode, transistors, IC).
You ought to be very careful in order to avoid the overheating of the IC’s
diodes and transistors terminals. Place the IC1 on its base, checking for the
right orientation. Use a 25W iron solder without using soldering flux. When you
have finished the structure of the circuit, check your work for the common
construction errors (misoriented components, solder bridges, misplaced
components), particularly where the transistors and diode are concerned.
Check if there are any dry joints. A proper joint is spread all over the pad
and is shiny. A dry one is dull, bulky and has the shape of the ball. If
everything is correct, clean the printed circuit board using a proper spray.
Finally, install the board in a metal box connecting its chassis to the ground
of the circuit (point 5). Connect the speaker to the points 2 and 3, and the
antenna to the point 1 (see figure 1). Use a 9V battery to supply the circuit.
The clip of the battery is connected to the points 4 and 5. The red wire of the
clip (positive/+) is connected to point 4, while the black one (negative/-) to
point 5.
Afterwards, stand in the middle of the room you want to check. Adjust the
potentiometer in order the sound coming from the loudspeaker LS to be slightly
audible. You must do this in order the external electromagnetic fields to be
ignored. Begin the detection of an RF signal in the room. The loudspeaker will
start to sound, when a signal in the frequency range (1 - 1000MHz) will be
detected.
| Parts List |
| Resistors : |
Capacitors : |
| R1 = 39 KΩ |
C1 = 10nF ceramic |
| R2 = 470 Ω |
C2 = 4,7 μF/16V electrolytic |
| R3 = 22 Ω |
C3 = 10nF ceramic |
| R4 = 100 Ω |
C4 = 1nF ceramic |
| R5 = 560 Ω |
C5 = 10nF ceramic |
| R6 = 1 MΩ |
C6 = 10nF ceramic |
| R7 = 220 Ω |
C7 = 10nF ceramic |
| R8 = 100 KΩ |
C8 = 10nF ceramic |
| R9 = 4,7 KΩ |
C9 = 4,7nF ceramic |
| R10 = 1,5 KΩ |
C10 = 10 μF/16V electrolytic |
| R11 = 10 KΩ |
Chip : |
| R12 = 220 Ω |
IC1 = ΜC3403P Motorola |
| R13 = 10 KΩ |
Transistors : |
| R14 = 100 KΩ |
TR1 = BFR 90A |
| R15 = 470 Ω |
TR2 = 2N2222 |
| R16 = 47 KΩ |
TR3 = 2N2222 |
| R17 = 47 KΩ |
Diode : |
| R18 = 1 KΩ |
D1 = NTE 112 |
| R19 = 10 KΩ |
Potesiometer : |
| R20 = 100 KΩ |
P1 = 4,7K Linear ποντεσιόμετρo |
| R21 = 47 KΩ |
Other : |
| R22 = 10 KΩ |
ΑNT = telescopic antenna. Radio type. |
| R23 = 47 KΩ |
LS = Loundspeaker 8Ω |
Title: Electronic Eavesdropping Devices Detector
Source: smartkit
Published on: 2005-02-03
Reads: 543
Print version:  Circuits > RF circuit > Electronic Eavesdropping Devices Detector |
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